In-situ mechanical characterization of wurtzite InAs nanowires
Identifieur interne : 001A18 ( Main/Repository ); précédent : 001A17; suivant : 001A19In-situ mechanical characterization of wurtzite InAs nanowires
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Abstract
High aspect ratio vertical InAs nanowires were mechanically characterized in a scanning electron microscope equipped with two micromanipulators. One, equipped with a calibrated atomic force microscope probe, was used for in-situ static bending of single nanowires along the ?11-20? crystallographic direction. The other one was equipped with a tungsten tip for dynamic resonance excitation of the same nanowires. This setup enabled a direct comparison between the two techniques. The crystal structure was analyzed using transmission electron microscopy, and for InAs nanowires with a hexagonal wutzite crystal structure, the bending modulus value was found to BM=43.5 GPa. This value is significantly lower than previously reported for both cubic zinc blende InAs bulk crystals and InAs nanowires. Besides, due to their high resonance quality factor (Q> 1200), the wurtzite InAs nanowires are shown to be a promising candidate for sub-femtogram mass detectors.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">In-situ mechanical characterization of wurtzite InAs nanowires</title><author><name sortKey="Erdelyi, R Bert" uniqKey="Erdelyi R">R Bert Erdelyi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest</s1><s2>Pusztaszeri út 59-67</s2><s3>HUN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Hongrie</country><placeName><settlement type="city">Budapest</settlement><region nuts="2">Hongrie centrale</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>University of Pannonia, Faculty of Information Technology, Doctoral School of Molecular- and Nanotechnologies, 8200 Veszprém</s1><s2>Egyetem út 10</s2><s3>HUN</s3><sZ>1 aut.</sZ></inist:fA14><country>Hongrie</country><wicri:noRegion>Egyetem út 10</wicri:noRegion></affiliation></author><author><name sortKey="Hannibal Madden, Morten" uniqKey="Hannibal Madden M">Morten Hannibal Madden</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>University of Copenhagen, Niels Bohr Institute, Nano-Science Center</s1><s2>2100 Copenhagen</s2><s3>DNK</s3><sZ>2 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Danemark</country><placeName><settlement type="city">Copenhague</settlement><region type="région" nuts="2">Hovedstaden</region></placeName></affiliation></author><author><name sortKey="Safran, Gy Rgy" uniqKey="Safran G">Gy Rgy Safran</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest</s1><s2>Pusztaszeri út 59-67</s2><s3>HUN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Hongrie</country><placeName><settlement type="city">Budapest</settlement><region nuts="2">Hongrie centrale</region></placeName></affiliation></author><author><name sortKey="Hajnal, Zolt N" uniqKey="Hajnal Z">Zolt N Hajnal</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest</s1><s2>Pusztaszeri út 59-67</s2><s3>HUN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Hongrie</country><placeName><settlement type="city">Budapest</settlement><region nuts="2">Hongrie centrale</region></placeName></affiliation></author><author><name sortKey="Endre Lukacs, Istvan" uniqKey="Endre Lukacs I">Istvan Endre Lukacs</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest</s1><s2>Pusztaszeri út 59-67</s2><s3>HUN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Hongrie</country><placeName><settlement type="city">Budapest</settlement><region nuts="2">Hongrie centrale</region></placeName></affiliation></author><author><name sortKey="F Lop, Gerg" uniqKey="F Lop G">Gerg F Löp</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Budapest University of Technology and Economics, Department of Physics, 1111 Budapest</s1><s2>Budafoki út</s2><s3>HUN</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Hongrie</country><placeName><settlement type="city">Budapest</settlement><region nuts="2">Hongrie centrale</region></placeName></affiliation></author><author><name sortKey="Csonka, Szabolcs" uniqKey="Csonka S">Szabolcs Csonka</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Budapest University of Technology and Economics, Department of Physics, 1111 Budapest</s1><s2>Budafoki út</s2><s3>HUN</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Hongrie</country><placeName><settlement type="city">Budapest</settlement><region nuts="2">Hongrie centrale</region></placeName></affiliation></author><author><name sortKey="Nygard, Jesper" uniqKey="Nygard J">Jesper Nygard</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>University of Copenhagen, Niels Bohr Institute, Nano-Science Center</s1><s2>2100 Copenhagen</s2><s3>DNK</s3><sZ>2 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Danemark</country><placeName><settlement type="city">Copenhague</settlement><region type="région" nuts="2">Hovedstaden</region></placeName></affiliation></author><author><name sortKey="Volk, J Nos" uniqKey="Volk J">J Nos Volk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest</s1><s2>Pusztaszeri út 59-67</s2><s3>HUN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Hongrie</country><placeName><settlement type="city">Budapest</settlement><region nuts="2">Hongrie centrale</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0372411</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0372411 INIST</idno><idno type="RBID">Pascal:12-0372411</idno><idno type="wicri:Area/Main/Corpus">001818</idno><idno type="wicri:Area/Main/Repository">001A18</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1098</idno><title level="j" type="abbreviated">Solid state commun.</title><title level="j" type="main">Solid state communications</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Bending test</term><term>Blende structure</term><term>Crystal orientation</term><term>Crystal structure</term><term>Finite element method</term><term>Hexagonal lattices</term><term>Indium arsenides</term><term>Nanowires</term><term>Quality factor</term><term>Scanning electron microscopy</term><term>Transmission electron microscopy</term><term>Young modulus</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Microscopie électronique balayage</term><term>Microscopie force atomique</term><term>Essai flexion</term><term>Orientation cristalline</term><term>Structure cristalline</term><term>Microscopie électronique transmission</term><term>Facteur qualité</term><term>Module Young</term><term>Méthode élément fini</term><term>Arséniure d'indium</term><term>Nanofil</term><term>Réseau hexagonal</term><term>Structure blende</term><term>InAs</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">High aspect ratio vertical InAs nanowires were mechanically characterized in a scanning electron microscope equipped with two micromanipulators. One, equipped with a calibrated atomic force microscope probe, was used for in-situ static bending of single nanowires along the ?11-20? crystallographic direction. The other one was equipped with a tungsten tip for dynamic resonance excitation of the same nanowires. This setup enabled a direct comparison between the two techniques. The crystal structure was analyzed using transmission electron microscopy, and for InAs nanowires with a hexagonal wutzite crystal structure, the bending modulus value was found to BM=43.5 GPa. This value is significantly lower than previously reported for both cubic zinc blende InAs bulk crystals and InAs nanowires. Besides, due to their high resonance quality factor (Q> 1200), the wurtzite InAs nanowires are shown to be a promising candidate for sub-femtogram mass detectors.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1098</s0></fA01><fA02 i1="01"><s0>SSCOA4</s0></fA02><fA03 i2="1"><s0>Solid state commun.</s0></fA03><fA05><s2>152</s2></fA05><fA06><s2>19</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>In-situ mechanical characterization of wurtzite InAs nanowires</s1></fA08><fA11 i1="01" i2="1"><s1>ERDELYI (Róbert)</s1></fA11><fA11 i1="02" i2="1"><s1>HANNIBAL MADDEN (Morten)</s1></fA11><fA11 i1="03" i2="1"><s1>SAFRAN (György)</s1></fA11><fA11 i1="04" i2="1"><s1>HAJNAL (Zoltán)</s1></fA11><fA11 i1="05" i2="1"><s1>ENDRE LUKACS (Istvan)</s1></fA11><fA11 i1="06" i2="1"><s1>FÜLÖP (Gergö)</s1></fA11><fA11 i1="07" i2="1"><s1>CSONKA (Szabolcs)</s1></fA11><fA11 i1="08" i2="1"><s1>NYGARD (Jesper)</s1></fA11><fA11 i1="09" i2="1"><s1>VOLK (János)</s1></fA11><fA14 i1="01"><s1>Research Centre for Natural Sciences, Institute of Technical Physics and Materials Science, 1025 Budapest</s1><s2>Pusztaszeri út 59-67</s2><s3>HUN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>University of Pannonia, Faculty of Information Technology, Doctoral School of Molecular- and Nanotechnologies, 8200 Veszprém</s1><s2>Egyetem út 10</s2><s3>HUN</s3><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>University of Copenhagen, Niels Bohr Institute, Nano-Science Center</s1><s2>2100 Copenhagen</s2><s3>DNK</s3><sZ>2 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="04"><s1>Budapest University of Technology and Economics, Department of Physics, 1111 Budapest</s1><s2>Budafoki út</s2><s3>HUN</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>1829-1833</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10917</s2><s5>354000502004440080</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0372411</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid state communications</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>High aspect ratio vertical InAs nanowires were mechanically characterized in a scanning electron microscope equipped with two micromanipulators. One, equipped with a calibrated atomic force microscope probe, was used for in-situ static bending of single nanowires along the ?11-20? crystallographic direction. The other one was equipped with a tungsten tip for dynamic resonance excitation of the same nanowires. This setup enabled a direct comparison between the two techniques. The crystal structure was analyzed using transmission electron microscopy, and for InAs nanowires with a hexagonal wutzite crystal structure, the bending modulus value was found to BM=43.5 GPa. This value is significantly lower than previously reported for both cubic zinc blende InAs bulk crystals and InAs nanowires. Besides, due to their high resonance quality factor (Q> 1200), the wurtzite InAs nanowires are shown to be a promising candidate for sub-femtogram mass detectors.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60B25</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Scanning electron microscopy</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Essai flexion</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Bending test</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Ensayo flexion</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Orientation cristalline</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Crystal orientation</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Structure cristalline</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Crystal structure</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Facteur qualité</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Quality factor</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Module Young</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Young modulus</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Méthode élément fini</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Finite element method</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Nanofil</s0><s5>16</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Nanowires</s0><s5>16</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Réseau hexagonal</s0><s5>18</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Hexagonal lattices</s0><s5>18</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Structure blende</s0><s5>19</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Blende structure</s0><s5>19</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Estructura blenda</s0><s5>19</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>289</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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